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| Guilin Strong Micro-Electronics Co.,Ltd. GMBAV70 (BAV70) SWITCHING DIODE (BAV70) FEATURES Characteristic Power dissipation Forward Current Reverse Voltage Junction and Storage Temperature DEVICE DEVICE =A BAV70=A4 BAV70=A4 ELECTRICAL ELECTRICAL Characteristic Reverse Breakdown Voltage (IR=100uA) Reverse Leakage Current (VR=70V) Forward Voltage(Test Condition) IF=1mA IF=10mA IF=50mA IF=150mA Diode Capacitance (VR=0V, f=1MHz) Reverse Recovery Time SOT-23 MARKING Symbol PD(Ta=25) IF VR TJ,Tstg Max 225 200 70 Unit mW mA V -55to+150 CHARACTERISTICS Symbol V(BR) IR Min 70 -- Max -- 1 Unit V uA ) (TA=25 25 unless otherwise noted 25) VF -- CD Trr 715 855 1000 1250 1.5 6 mV -- -- pF nS Guilin Strong Micro-Electronics Co.,Ltd. GMBAV70 DIMENSION DIMENSION |
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